SU 8 EBL - NanoLabStaff/nanolab GitHub Wiki

30kV 1μm SU-8 Process

by Jonas M. Ribe

  1. Spin coat SU-8 2

     6000rpm for 30s
 Ramp: 300rpm/s (+20s)

  2. Soft bake

     1min at 65°C
 2min at 95°C

  3. Exposure (EBL)

     Features: Areas
 HV: 30kV
 Current: 24pA
 Dose: 0.60μC/cm^2

  4. Post-exposure Bake

     1min at 65°C
 Ramp hot plate to 95°C 
 2min at 95°C
 Turn off hot-plate and leave sample until it has reached room temperature (~40min). (Rapid cooling should be avoided).

  5. Develop

     ~1 min in mrDev 600 (under agitation)
 Rinse in fresh developer
 Rinse in IPA
 Dry w. N2 (g)

SU-8-EBL-C.jpg
SU-8 dose matrix

30kV 0.1-1μm SU-8 Process

by Kai S. Beckwith

This is my protocol for exposing various nanostructures and microstructures of SU-8. It is quite similar to Jonas', but I post it here for reference anyway.

See page [Dilution-of-SU-8-2000-series]] for recipe of how to make different thicknesses of SU-8. See also [this process information on LIMS for general tips on using the EBL.

  1. Clean substrate (glass, silicon, others)

     Rinse with acetone, IPA and DIW, blow dry.
 Plasma clean 30s O2/50/50
 Rinse again with acetone, IPA and DIW, blow dry.
 Leave on 95°C for 2 minutes, place on cold plate for 1 minute.

  2. Spin coat SU-8 2000

     6000rpm for 36s
 Ramp: 1000rpm/s

  3. Soft bake

     1min at 95°C
 Leave on cold plate 2 minutes before going to EBL.

  4. Exposure (EBL)

     Note: The doses vary by resist thickness, 
 these are good for 1µm. For thinner resists 
 slightly smaller doses may be used, 
 but the below doses work fine as well.


 Features: Areas
 HV: 30kV
 Current: 100-500pA
 Step size: 0.1µm
 Dose: 1μC/cm^2

 Features: Curves
 HV: 30kV
 Current: 100-500pA
 Step size: 0.05µm
 Dose: 1.5μC/cm^2
        
 Features: Single-pixel dots/pillars
 HV: 30kV
 Current: 100pA
 Dose: 2000-2500aC
         
 Features: Single-pixel lines
 HV: 30kV
 Current: 100pA
 Dose: 50-60pC/cm

  5. PEB:

     1min at 95°C
 1min on cold plate

  6. Develop

     ~1 min in mrDev 600 (under agitation)
 Rinse in fresh developer
 Rinse in IPA
 Dry w. N2 (g)

Expected results: for the single-pixel exposures about 50-100 nm features are expected, depending on resist thickness. Areas should be well-defined with sharp edges.