AMONIL residual layer etch - NanoLabStaff/nanolab GitHub Wiki
by Aksel Skauge Mellbye ([email protected])
1. Chamber condition
Run recipe on dummy wafer to condition the chamber.
2. Insert sample
Use Al2O3 carrier and Fomblin oil for mounting the sample.
3. Standard etch recipe:
CF4: 15 sccm
CHF3: 15 sccm
RF power: 75 W
ICP power: 25 W
T= 20 °C
Helium pressure: 10 Torr
Chamber pressure: 5 mTorr
Etch rate: 35 nm/min.
Example of using this recipe to etch AMONIL residual layer. Substrate is SrTiO3(001). Before etch, the residual layer thickness was 30 nm. NIL stamp used for imprint was 210 nm high, 250 nm wide line pattern (600 nm pitch) from Eulitha.
