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DDR


DDR SDRAM

DDR SDRAM is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM consists of a single 2n–bit wide data transfer at the internal DRAM array during one clock cycle, and two corresponding n–bit wide data transfers at the I/O pins, each during one-half of the clock cycle. Therefore, the internal data bus is twice as wide as the external interface would indicate.

Read and write accesses to the DDR SDRAM are burst oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. The burst length can be programmed to 2, 4, or 8 locations. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered with an Active command are used to select the bank and row to be accessed. The address bits registered with a Read or Write command are used to select the bank and the starting column location for the burst access. An Auto Precharge function may be enabled to provide a row precharge that is initiated at the end of the burst access.

Because of the high data-transition speeds, on a heavily loaded bus the low voltage TTL interface cannot be used for the I/O buffers. For that reason, DDR SDRAM uses an I/O interface called SSTL_2 (Stub-Series Terminated Logic).

Read Operation

Burst read operations are initiated with a Read command. The starting column and bank addresses are provided with this command. The Auto Precharge operation is either enabled or disabled for that burst access. If Auto Precharge is enabled, the row that is accessed will start precharge at the completion of the burst operation.

Consecutive burst Read operations for the DDR SDRAM memory