Reviews - jspark85/share GitHub Wiki

Review papers (Semiconductor, electrical)

• Rev. Mod. Phys. 36, 1042 (1964). Electrical Properties of Amorphous Semiconductors
• Rev. Mod. Phys. 50, 797 (1978). The electronic structure of impurities and other point defects in semiconductors
• Rev. Mod. Phys. 53, 745 (1981). Electron scattering by ionized impurities in semiconductors
• Rev. Mod. Phys. 62, 173 (1990). Theory of semiconductor superlattice electronic structure
• Rev. Mod. Phys. 64, 755 (1992). Theory of band tails in heavily doped semiconductors
• Rev. Mod. Phys. 74, 895 (2002). Theory of ultrafast phenomena in photoexcited semiconductors
• Rev. Mod. Phys. 77, 1173 (2005). Isotope effects on the optical spectra of semiconductors
• Rev. Mod. Phys. 82, 427 (2010). Colloquium: Structural, electronic, and transport properties of silicon nanowires
• Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31, 050821 (2013). Band offsets, Schottky barrier heights, and their effects on electronic devices
• Applied Physics Reviews 2, 031304 (2015). Compound semiconductor alloys: From atomic-scale structure to bandgap bowing

Review papers (Semiconductor, superconductor)

• Rev. Mod. Phys. 36, 240 (1964). The Existence of a Superconducting State in Semiconductors

Review papers (Semiconductor, magnetism)

• Rev. Mod. Phys. 40, 812 (1968). Localization of Electrons in Impure Semiconductors by a Magnetic Field
• Rev. Mod. Phys. 78, 809 (2006). Theory of ferromagnetic (III,Mn)V semiconductors
• Rev. Mod. Phys. 86, 187 (2014). Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Rev. Mod. Phys. 87, 1311 (2015). Spinodal nanodecomposition in semiconductors doped with transition metals
• Rev. Mod. Phys. 89, 011001 (2017). Colloquium: Persistent spin textures in semiconductor nanostructures

Review papers (Calculation method)

• Rev. Mod. Phys. 32, 275 (1960). Basis Functions for Ab Initio Calculations
• Rev. Mod. Phys. 55, 645 (1983). The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
• Rev. Mod. Phys. 64, 1045 (1992). Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients
• Rev. Mod. Phys. 72, 1041 (2000). Real-space mesh techniques in density-functional theory
• Rev. Mod. Phys. 73, 515 (2001). Phonons and related crystal properties from density-functional perturbation theory
• Rev. Mod. Phys. 82, 1633 (2010). First-principles theory of dilute magnetic semiconductors
• Rev. Mod. Phys. 82, 1959 (2010). Berry phase effects on electronic properties
• Rev. Mod. Phys. 84, 1419 (2012). Maximally localized Wannier functions: Theory and applications
• Rev. Mod. Phys. 87, 897 (2015). Density functional theory: Its origins, rise to prominence, and future
• Rev. Mod. Phys. 89, 015003 (2017). Electron-phonon interactions from first principles
• Computational Materials Science 151, 174-180 (2018). Accurate and efficient band-offset calculations from density functional theory
• Self-Interaction Correction in Density Functional Theory: The Road Less Traveled
• Electrical Polarization and Orbital Magnetization: The Modern Theories
• An Introduction to Maximally-Localized Wannier Functions

Review papers (Experiment tools)

• Theoretical approaches to x-ray absorption fine structure, Rev. Mod. Phys. 72, 621 (2000).
• Cathodoluminescence for the 21st century: Learning more from light featured, Applied Physics Reviews 4, 031103 (2017)

Review papers (Solar cells)

• Cu2ZnSnS4 solar cells: Physics and technology by alternative tracks

Review papers (Material)

• Applied Physics Express 11, 060101 (2018), Design and exploration of semiconductors from first principles: A review of recent advances

Review papers (Defect)

• J. Appl. Phys. 95, 3851 (2004). First-principles calculations for defects and impurities: Applications to III- nitrides
• Rev. Mod. Phys. 85, 1583 (2013). Defect identification in semiconductors with positron annihilation: Experiment and theory
• Rev. Mod. Phys. 86, 253 (2014). First-principles calculations for point defects in solids
• J. Appl. Phys. 119, 181101 (2016). Tutorial: Defects in semiconductors—Combining experiment and theory
• J. Appl. Phys. 123, 161561 (2018). Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra

Thesis (Semiconductors)

• The Institute for Microelectronics
• Sergey Smirnov, Physical Modeling of Electron Transport in Strained Silicon and Silicon-Germanium
• Stephan-Enzo Ungersböck, Advanced Modeling of Strained CMOS Technology
• Robert Entner, Modeling and Simulation of Negative Bias Temperature Instability
• Siddhartha Dhar, Analytical Mobility Modeling for Strained Silicon-Based Devices
• THOMAS WINDBACHER, Engineering Gate Stacks for Field-Effect Transistors
• Stanislav Vitanov, Simulation of High Electron Mobility Transistors
• Philipp Hehenberger, Advanced Characterization of the Bias Temperature Instability
• WOLFGANG GÖS, Hole Trapping and the Negative Bias Temperature Instability
• Ivan Starkov, Comprehensive Physical Modeling of Hot-Carrier Induced Degradation
• Dmitry Osintsev, Modeling Spintronic Effects in Silicon
• Raffaele Alberto Coppeta, Dislocation Modeling in III-Nitrides

Thermoelectric

• A practical field guide to thermoelectrics: Fundamentals, synthesis, and characterization